The 6th International Memory Workshop (IMW) will be held at the Regent Taipei, Taiwan from May 18th-21st, 2014.
Macronix, as a sponsor and local event organizer chair, will deliver two paper presentations as below, featuring our breakthrough, innovative technology research & development on 3D VG NAND Flash.
Time: 9:10am, Sunday, May 18thTopic: 3D Vertical Gate NAND Device & Architecture
Time: 2:00pm, Wednesday, May 21stTopic: Trapping-free String Select Transistors and Ground Select Transistors for VG-type 3D NAND Flash Memory
The IMW is mainly sponsored by the IEEE Electron Devices Society and meets annually in May. It is a unique forum for specialists in all aspects of memory (nonvolatile & volatile) microelectronics and people with different backgrounds who wish to gain a better understanding of the field. The conference brings the memory community together in a workshop environment to discuss the memory process and design technologies, applications, market needs and strategies. The important goal of IMW is to provide an informal environment to encourage discussions and lively interactions among participants.
IMW is attended by a wide international community from North America, Europe and Asia. The number of attendees typically exceeds 200 in recent years, reflecting the growing interest in the workshop. Each year, there are over 80 papers received and about 35 selected for oral presentation.
IMW 2014 Program